Qorvo's AH11-G is a high linearity amplifier for use in digital communication systems. It combines low noise figure and high intercept point into a low-cost SMT solution. This device extends the linear efficiency advantages of Qorvo's AH1-G to higher power levels by combining two internally matched die. This dual amplifier configuration allows for the optimal design of balanced or push-pull operation. The amplifier can also be used for single-ended operation in each branch of a diversity receive system.
A mature and reliable GaAs MESFET technology is employed to maximize linearity while achieving low noise figure. The SOIC-8 package is lead-free / RoHS-compliant and is thermally enhanced to achieve an MTTF greater than 100 years at a case temperature of +85 °C. All devices are 100% RF and DC tested.
Frequency Min(MHz) | 150 |
Frequency Max(MHz) | 3,000 |
Gain(dB) | 12 |
OP1dB(dBm) | 24 |
OIP3(dBm) | 46 |
NF(dB) | 4.1 |
Voltage(V) | 5 |
Current(mA) | 300 |
RoHS | Yes |
Lead Free | Yes |
Halogen Free | Yes |
ITAR Restricted | No |
This product appears in the following application block diagrams: