UJ4SC075010L8S
750 V, 10.7 mohm SiC FET
Key Features
- FOn Resistance RDS(on): 10.7 mohm (typ)
- Operating temperature: 175C (max)
- Excellent reverse recovery: Qrr = 274nC
- Low body diode VFSD: 1.1V
- Low gate charge: QG = 75nC
- Threshold voltage VG(th): 4.5V (typ) allowing 0 to 15V drive
- Low intrinsic capacitance
- ESD Protected: HBM Class 2
- MO-229 package for faster switching, clean gate waveforms
The UJ4SC075010L8S is a 750V, 10.7 mohm G4 SiC FET. It is based on a unique ‘cascode’ circuit configuration, in which a normally-on SiC JFET is co-packaged with a Si MOSFET to produce a normally-off SiC FET device. The device’s standard gate-drive characteristics allows use of off-the-shelf gate drivers hence requiring minimal re-design when replacing Si IGBTs, Si superjunction devices or SiC MOSFETs. Available in the space-saving MO-229 package which enables automated assembly, this device exhibits ultra-low gate charge and exceptional reverse recovery characteristics, making it ideal for switching inductive loads and any application requiring standard gate drive.
Typical Applications
- Server and Telecom power supplies
- Switch mode power supplies
- DC-DC converter circuits
- EV Charging
- PV Inverters
Product Categories
| VDS Max(V) | 750 |
| RDS(on) Typ @ 25C(mohm) | 10.7 |
| ID Max(A) | 106 |
| Generation | Gen 4 |
| Tj Max(°C) | 175 |
| Automotive Qualification | No |
| Package Type | TOLL |
| RoHS | Yes |
| Lead Free | Yes |
| Halogen Free | Yes |
| ITAR Restricted | No |
| ECCN | EAR99 |
This product appears in the following application block diagrams: