UF4SC120023B7S
1200 V, 23 mohm SiC FET
Key Features
- On Resistance RDS(on): 23 mohm (typ)
- Operating temperature: 175C (max)
- Excellent reverse recovery: Qrr = 243nC
- Low body diode VFSD: 1.2V
- Low gate charge: QG = 37.8nC
- Low intrinsic capacitance
- ESD Protected: HBM Class 2
This SiC FET device is based on a unique ‘cascode’ circuit configuration, in which a normally-on SiC JFET is co-packaged with a Si MOSFET to produce a normally-off SiC FET device. The device’s standard gate-drive characteristics allows for a true “drop-in replacement” to Si IGBTs, Si FETs, SiC MOSFETs or Si superjunction devices. Available in the D2PAK-7L package, this device exhibits ultra-low gate charge and exceptional reverse recovery characteristics, making it ideal for switching inductive loads and any application requiring standard gate drive.
Typical Applications
- EV Charging
- PV Inverters
- Switch mode power supplies
- Power factor correction circuits
- DC-DC converter circuits
- Induction heating
Product Categories
| VDS Max(V) | 1,200 |
| RDS(on) Typ @ 25C(mohm) | 23 |
| ID Max(A) | 72 |
| Generation | Gen 4 |
| Tj Max(°C) | 175 |
| Automotive Qualification | Yes |
| Package Type | D2PAK-7L |
| RoHS | Yes |
| Lead Free | Yes |
| Halogen Free | Yes |
| ITAR Restricted | No |
| ECCN | EAR99 |
This product appears in the following application block diagrams: