TGF1350-SCC
DC - 18 GHz, 0.3 mm GaAs MESFET Die
Key Features
- 0.5 um x 300 um FET
- 1.5 dB noise figure with 11dB associated gain at 10 GHz
- 2.5 dB noise figure with 7 dB associated gain at 18 GHz
- All-gold metallization for high reliability
- Recessed gate structure
- Dimensions: 0.620 x 0.514 x 0.102 mm (0.024 x 0.020 x 0.004 in)
Qorvo's TGF1350-SCC is a single-gate GaAs field-effect transistor (FET) used for low noise applications DC to 18 GHz.
Its bond pad is gold plated for compatibility with thermocompression and thermosonic compatibility wire bonding processes. The TGF1350-SCC is readily assembled using automated equipment. Die attach should be accomplished with conductive epoxy only. Eutectic attach is not recommended.
Application Categories
- Applications> Customer Premises Equipment
- Applications> Defense & Aerospace> Communications
- Applications> Defense & Aerospace> Electronic Warfare
- Applications> Defense & Aerospace> Radar
- Applications> Defense & Aerospace> Space
- Applications> Network Infrastructure> Point-to-Point Radio
- Applications> Network Infrastructure> Satellite Communications
| Frequency Min(MHz) | DC |
| Frequency Max(MHz) | 18,000 |
| Gain(dB) | 11 |
| Psat(dBm) | 13 |
| NF(dB) | 1.5 |
| Vd(V) | 3 |
| Idq(mA) | 15 |
| Package Type | Die |
| RoHS | No |
| Lead Free | No |
| Halogen Free | No |
| ITAR Restricted | No |