Products

    Product List

    GaAs pHEMTs (8)

    Part #
    Description
    Frequency Min
    MHz
    Frequency Max
    MHz
    Type
    Gain
    dB
    OP1dB
    dBm
    Psat
    dBm
    NF
    dB
    PAE
    %
    Drain Efficiency
    %
    Vd
    V
    Idq
    mA
    Measured At
    Package Type
    Package
    mm
    QPD2018D
    DC - 20 GHz, 180 um Discrete GaAs pHEMT Die
    DC
    20,000
    14
    22
    22
    1
    55
    8
    29
    Die
    0.41 x 0.34 x 0.10
    QPD2025D
    DC - 20 GHz, 250 um Discrete GaAs pHEMT Die
    DC
    20,000
    14
    24
    24
    0.9
    58
    8
    40
    Die
    0.41 x 0.34 x 0.10
    QPD2040D
    DC - 20 GHz, 400 um Discrete GaAs pHEMT Die
    DC
    20,000
    13
    26
    26
    1.1
    55
    8
    65
    Die
    QPD2060D
    DC - 20 GHz, 600 um Discrete GaAs pHEMT Die
    DC
    20,000
    12
    28
    28
    1.4
    55
    8
    97
    Die
    0.41 x 0.34 x 0.10
    QPD2080D
    DC - 20 GHz, 800 um Discrete GaAs pHEMT Die
    DC
    20,000
    11.5
    29.5
    29.5
    1
    56
    8
    130
    Die
    0.41 x 0.54 x 0.10
    QPD2120D
    DC - 20 GHz, 1200 um Discrete GaAs pHEMT Die
    DC
    20,000
    11
    31
    31
    1
    57
    8
    194
    Die
    0.41 x 0.54 x 0.10
    QPD2160D
    DC - 20 GHz, 1600 um Discrete GaAs pHEMT Die
    DC
    20,000
    10.4
    32.5
    32.5
    1
    63
    8
    258
    Die
    0.41 x 0.54 x 0.10
    TQP3M6005
    1700 - 2000 MHz High IP3 Dual pHEMT Low Noise Amplifier
    1,700
    2,000
    17.9
    21.6
    0.36
    4.5
    50

    GaN HEMTs (58)

    Part #
    Description
    Frequency Min
    MHz
    Frequency Max
    MHz
    Type
    Gain
    dB
    OP1dB
    dBm
    Psat
    dBm
    NF
    dB
    PAE
    %
    Drain Efficiency
    %
    Vd
    V
    Idq
    mA
    Measured At
    Package Type
    Package
    mm
    QPD0005
    2.5 - 5.0 GHz, 8 Watt, 48 Volt GaN RF Transistor
    2,500
    5,000
    18.8
    39.4
    72.9
    48
    12
    DFN
    4.5 x 4.0
    QPD0005M
    6 Watt, 48 Volt, 2.5 - 5.0 GHz, GaN RF Transistor
    2,500
    5,000
    Unmatched
    18.6
    37.7
    74.1
    48
    20
    DFN
    4.5 x 4.0
    QPD0006
    13.5 Watt, 48 Volt, 2.5 - 5.0 GHz, GaN on SiC RF Transistor
    2,500
    5,000
    16
    41.3
    75
    48
    40
    DFN
    4.5 x 4.0
    QPD0007
    DC - 5 GHz, 20 Watt, 48 Volt, GaN RF Transistor
    DC
    5,000
    19
    43
    73
    48
    32.5
    DFN
    4.5 x 4.0
    QPD0011
    3.3 - 3.6 GHz, 30 Watt / 60 Watt, 48 Volt Asymmetric Doherty
    3,300
    3,600
    13.3
    49.5
    48
    48
    65
    DFN
    7.0 x 6.5
    QPD0020
    DC - 6 GHz, 35 Watt, 48 Volt GaN RF Power Transistor
    DC
    6,000
    18.8
    45.4
    77.8
    48
    30
    QFN
    4.0 x 3.0
    QPD0030
    DC - 5 GHz, 45 Watt, 48 Volt GaN RF Power Transistor
    DC
    5,000
    22.3
    46.9
    71.5
    48
    85
    QFN
    4.0 x 3.0
    QPD0050
    DC - 3.6 GHz, 75 Watt, 48 Volt GaN RF Power Transistor
    DC
    3,600
    22.5
    48.7
    80
    48
    130
    QPD0060
    DC - 3.6 GHz, 90 Watt, 48 Volt GaN RF Power Transistor
    DC
    3,600
    25
    49.5
    73
    48
    150
    QPD1000
    0.03 - 1.215 GHz, 15 Watt, 28 Volt GaN RF Input-Matched Transistor
    30
    1,215
    19
    43.8
    78.2
    28
    50
    DFN
    5 x 6
    QPD1003
    1.2 - 1.4 GHz, 500 Watt, 50 Volt, GaN RF IMFET
    1,200
    1,400
    19.9
    57.3
    66.7
    50
    750
    RF-565
    QPD1004
    30 - 1200 MHz, 25 Watt, 50 Volt GaN RF Input-Matched Transistor
    30
    1,200
    20.8
    73.2
    50
    50
    DFN
    6.0 x 5.0
    QPD1006
    450 Watt, 50 Volt, 1.2 - 1.4 GHz GaN IMFET
    1,200
    1,400
    17.5
    54.9
    45
    750
    Ni50-CW
    19 x 17.68 x 4.49
    QPD1008
    DC - 3.2 GHz, 125 Watt, 50 Volt GaN RF Power Transistor
    DC
    3,200
    > 17
    52
    70
    50
    260
    NI-360
    QPD1008L
    DC - 3.2 GHz, 125 Watt, 50 Volt GaN RF Power Transistor
    DC
    3,200
    > 17
    52
    70
    50
    260
    NI-360
    QPD1009
    DC - 4 GHz, 15 Watt, 50 Volt GaN RF Transistor
    DC
    4,000
    24
    42.3
    72
    50
    26
    QFN
    3 x 3
    QPD1010
    DC - 4 GHz, 10 Watt, 50 Volt GaN RF Transistor
    DC
    4,000
    24.7
    40.4
    70
    50
    18
    QFN
    3 x 3
    QPD1011
    7 Watt, 50 Volt, 0.03 - 1.2 GHz, GaN RF Input-Matched Transistor
    30
    1,200
    21
    39.4
    60
    50
    20
    DFN / SMT
    6 x 5
    QPD1013
    DC - 2.7 GHz, 150 Watt, 65 Volt GaN RF Transistor
    DC
    2,700
    21.8
    64.8
    65
    240
    DFN
    7.2 x 6.6
    QPD1014
    15 Watt, 50 Volt, 0.03 - 1.2 GHz, GaN RF Input-Matched Transistor
    30
    1,200
    18.4
    41
    69.5
    50
    25
    DFN
    6.0 x 5.0
    QPD1015
    DC - 3.7 GHz, 65 Watt, 50 V GaN RF Power Transistor
    DC
    3,700
    20
    48.5
    74
    50
    65
    NI-360
    QPD1015L
    DC - 3.7 GHz, 65 Watt, 50 V GaN RF Power Transistor
    DC
    3,700
    20
    48.5
    74
    50
    65
    NI-360
    QPD1016
    500 Watt, 50 Volt, DC - 1.7 GHz, GaN RF Transistor
    DC
    1,700
    23.9
    58.3
    77.4
    50
    1,000
    NI-780
    QPD1016L
    500 Watt, 50 Volt, DC - 1.7 GHz, GaN RF Transistor
    DC
    1,700
    15
    57.3
    67
    50
    1,000
    NI-780
    QPD1017
    3.1 - 3.5 GHz, 450 Watt, 50 V GaN RF IMFET
    3,100
    3,500
    16.5
    56.6
    60
    50
    750
    RF-565
    17.40 x 24.00 x 4.31
    QPD1018
    500 Watt, 50 Volt, 2.7 - 3.1 GHz, GaN RF IMFET
    2,700
    3,100
    17.7
    57.6
    67.9
    50
    750
    RF-565
    17.4 x 24 x 4.3
    QPD1019
    500 Watt, 50 Volt, 2.9 - 3.3 GHz, GaN RF IMFET
    2,900
    3,300
    15.5
    57.7
    67
    50
    750
    RF-565
    QPD1022
    DC - 12 GHz, 10 Watt, 32 V GaN RF Transistor
    DC
    12,000
    24
    68.8
    32
    50
    QFN
    3.0 x 3.0
    QPD1025
    1800 Watt, 65 Volt, .96 - 1.215 GHz, GaN RF Input-Matched Transistor
    960
    1,215
    22.5
    62.7
    77.2
    65
    1,500
    NI-1230 (Earless)
    QPD1025L
    1800 Watt, 65 Volt, .96 - 1.215 GHz, GaN RF Input-Matched Transistor
    960
    1,215
    22.5
    62.7
    77.2
    65
    1,500
    NI-1230 (Eared)
    QPD1026L
    1300 Watt, 65 Volt, 420 - 450 MHz GaN RF Input-Matched Transistor
    420
    450
    Input-Matched
    25.9
    61.2
    80.8
    65
    1,500
    NI-1230 (Eared)
    QPD1028
    1.2 - 1.4 GHz, 750 Watt, 65 Volt, GaN on SiC RF Transistor
    1,200
    1,400
    18
    58.75
    59
    70
    65
    750
    NI-780
    20.57 x 9.78 x 3.63
    QPD1028L
    1.2 - 1.4 GHz, 750 Watt, 65 Volt GaN on SiC RF Transistor
    1,200
    1,400
    18
    58.75
    59
    70
    65
    750
    NI-780
    20.57 x 9.78 x 3.63
    QPD1029L
    1500 Watt, 65 Volt, 1.2 - 1.4 GHz, GaN RF Input-Matched Transistor
    1,200
    1,400
    61.8
    75
    65
    1,500
    NI-1230 (Eared)
    T1G4020036-FL
    DC - 3.5 GHz, 2 x 200 Watt, 50 Volt GaN RF Power Transistor
    DC
    3,500
    18.1
    2 x 53.0
    67.6
    50
    520
    NI-650
    T1G4020036-FS
    DC - 3.5 GHz, 2 x 200 Watt, 50 Volt GaN RF Power Transistor
    DC
    3,500
    18.1
    2 x 53.0
    67.6
    50
    520
    NI-650
    T2G4005528-FS
    DC - 3.5 GHz, 55 Watt, 28 V GaN RF Power Transistor
    DC
    3,500
    16
    47.2
    >
    52
    28
    200
    NI-360
    T2G6000528-Q3
    DC - 6 GHz, 10 Watt, 28 V GaN RF Power Transistor
    DC
    6,000
    17
    40
    53
    28
    50
    NI-200
    T2G6001528-Q3
    DC - 6 GHz, 15 Watt, 28 V GaN RF Power Transistor
    DC
    6,000
    15.5
    42
    >
    72
    28
    100
    NI-200
    T2G6003028-FL
    DC - 6 GHz, 30 Watt, 28 V GaN RF Power Transistor
    DC
    6,000
    14
    45
    50
    28
    200
    NI-200
    T2G6003028-FS
    DC - 6 GHz, 30 Watt, 28 V GaN RF Power Transistor
    DC
    6,000
    14
    45
    50
    28
    200
    NI-200
    TGF2023-2-01
    DC - 18 GHz, 6 Watt Discrete Power GaN on SiC HEMT
    DC
    18,000
    18
    38
    71.6
    12 to 32
    25 to 125
    Die
    TGF2023-2-02
    DC - 18 GHz, 12 Watt Discrete Power GaN on SiC HEMT
    DC
    18,000
    21
    40.1
    73.3
    12 to 32
    50 to 250
    Die
    TGF2023-2-05
    DC - 18 GHz, 25 Watt Discrete Power GaN on SiC HEMT
    DC
    18,000
    18
    43
    78.3
    12 to 32
    100 to 500
    Die
    TGF2023-2-10
    DC - 14 GHz, 50 Watt Discrete Power GaN on SiC HEMT
    DC
    14,000
    19.8
    47.3
    69.5
    12 to 32
    200 to 1,000
    Die
    TGF2023-2-20
    DC - 14 GHz, 100 Watt Discrete Power GaN on SiC HEMT
    DC
    14,000
    19.2
    50.5
    70.5
    12 to 32
    400 to 2,000
    Die
    TGF2819-FL
    DC - 4.0 GHz, 200 Watt Peak, 40 Watt Avg.Power, 50 Volt, GaN RF Power Transistor
    DC
    4,000
    > 14
    51
    50
    250
    NI-360
    TGF2819-FS
    DC - 4.0 GHz, 200 Watt Peak, 40 Watt Avg. Power, 50 Volt, GaN RF Power Transistor
    DC
    4,000
    > 14
    51
    50
    250
    NI-360
    TGF2929-FL
    DC - 3.5 GHz, 100 Watt, 28 V GaN RF Power Transistor
    DC
    3,500
    > 14
    50.3
    > 50
    28
    260
    NI-360
    TGF2933
    DC - 25 GHz, 7 Watt, 28 V GaN RF Transistor
    DC
    25,000
    15
    38.6
    57
    28
    80
    die
    0.83 x 0.55 x 0.10
    TGF2954
    DC - 12 GHz, 27 Watt Discrete Power GaN on SiC HEMT
    DC
    12,000
    19.6
    44.5
    71.6
    32
    100
    Die
    TGF2965-SM
    0.03 - 3 GHz, 5 Watt, 32 V, 50 Ohm GaN RF Input-Matched Transistor
    30
    3,000
    18
    37.8
    63
    32
    25
    QFN
    3 x 3
    TGF2977-SM
    DC - 12 GHz, 5 Watt, 32 V GaN RF Transistor
    DC
    12,000
    13
    37.8
    50
    32
    25
    QFN
    3 x 3
    TGF2978-SM
    DC - 12 GHz, 20 Watt, 32 V GaN RF Transistor
    DC
    12,000
    11
    42.8
    46
    32
    100
    QFN
    4 x 3
    TGF2979-SM
    DC - 12 GHz, 25 Watt, 32 Volt GaN RF Transistor
    DC
    12,000
    11
    43.4
    45
    32
    150
    QFN
    4 x 3
    TGF3015-SM
    0.03 - 3.0 GHz, 10 Watt, 32 Volt GaN RF Input-Matched Transistor
    30
    3,000
    17
    40.4
    63
    32
    50
    QFN
    3 x 3
    TGF3020-SM
    4 - 6 GHz, 5 Watt, 32 V, 50 Ohm GaN RF Input-Matched Transistor
    4,000
    6,000
    12.7
    38.3
    59.6 @ 5GHz
    32
    25
    QFN
    3 x 3
    TGF3021-SM
    0.03 - 4.0 GHz, 30 Watt, 32 V GaN RF Transistor
    30
    4,000
    19
    45
    73
    32
    65
    QFN
    4 x 3

    Low Noise Amplifiers (3)

    Part #
    Description
    Frequency Min
    GHz
    Frequency Max
    GHz
    Gain
    dB
    NF
    dB
    OP1dB
    dBm
    OIP3
    dBm
    Voltage
    V
    Current
    mA
    Package Type
    Package
    mm
    TQL9066
    50 - 1500 MHz High IP3 Dual Low Noise Amplifier
    0.05
    1.5
    18.4
    0.62
    21.4
    40
    5
    55
    QFN
    4 x 4 x 0.85
    TQP3M9040
    1500 - 2300 MHz High IP3 Dual Low Noise Amplifier
    1.5
    2.3
    18
    0.62
    20.8
    39.8
    5
    57
    QFN
    4 x 4 x 0.85
    TQP3M9041
    2300 - 6000 MHz High IP3 Dual Low Noise Amplifier
    2.3
    6
    18.4
    0.8
    22.5
    38.2
    5
    57
    QFN
    4 x 4 x 0.85

    Power Amplifiers (1)

    Part #
    Description
    Frequency Min
    GHz
    Frequency Max
    GHz
    Pout
    dBm
    Psat
    dBm
    Gain
    dB
    PAE
    %
    OIP3
    dBm
    Voltage
    V
    Current
    mA
    Package Type
    Package
    mm
    QPB3810
    8 Watt, 48 Volt, 3.4 - 3.8 GHz GaN Power Amplifier Module (PAM)
    3.4
    3.8
    39
    47.5
    48
    SMT
    12.0 x 8.0

    SiC FETs (80)

    Part #
    Description
    VDS Max
    V
    RDS(on) Typ @ 25C
    mohm
    ID Max
    A
    Generation
    Tj Max
    °C
    Automotive Qualification
    Package Type
    UF3C065030B3
    650 V, 27 mohm SiC FET
    650
    27
    65
    Gen 3
    175
    Yes
    D2PAK-3L
    UF3C065030K3S
    650 V, 27 mohm SiC FET
    650
    27
    85
    Gen 3
    175
    Yes
    TO-247-3L
    UF3C065030K4S
    650 V, 27 mohm SiC FET
    650
    27
    85
    Gen 3
    175
    Yes
    TO-247-4L
    UF3C065030T3S
    650 V, 27 mohm SiC FET
    650
    27
    85
    Gen 3
    175
    Yes
    TO-220-3L
    UF3C065040B3
    650 V, 42 mohm SiC FET
    650
    42
    41
    Gen 3
    175
    Yes
    D2PAK-3L
    UF3C065040K3S
    650 V, 42 mohm SiC FET
    650
    42
    54
    Gen 3
    175
    Yes
    TO-247-3L
    UF3C065040K4S
    650 V, 42 mohm SiC FET
    650
    42
    54
    Gen 3
    175
    Yes
    TO-247-4L
    UF3C065040T3S
    650 V, 42 mohm SiC FET
    650
    42
    54
    Gen 3
    175
    Yes
    TO-220-3L
    UF3C065080B3
    650 V, 80 mohm SiC FET
    650
    80
    25
    Gen 3
    175
    Yes
    D2PAK-3L
    UF3C065080B7S
    650 V, 85 mohm SiC FET
    650
    85
    27
    Gen 3
    175
    No
    D2PAK-7L
    UF3C065080K3S
    650 V, 80 mohm SiC FET
    650
    80
    31
    Gen 3
    175
    Yes
    TO-247-3L
    UF3C065080K4S
    650 V, 80 mohm SiC FET
    650
    80
    31
    Gen 3
    175
    Yes
    TO-247-4L
    UF3C065080T3S
    650 V, 80 mohm SiC FET
    650
    80
    31
    Gen 3
    175
    Yes
    TO-220-3L
    UF3C120040K3S
    1200 V, 35 mohm SiC FET
    1,200
    35
    65
    Gen 3
    175
    Yes
    TO-247-3L
    UF3C120040K4S
    1200 V, 35 mohm SiC FET
    1,200
    35
    65
    Gen 3
    175
    Yes
    TO-247-4L
    UF3C120080B7S
    1200 V, 85 mohm SiC FET
    1,200
    85
    28.8
    Gen 3
    175
    No
    D2PAK-7L
    UF3C120080K3S
    1200 V, 80 mohm SiC FET
    1,200
    80
    33
    Gen 3
    175
    Yes
    TO-247-3L
    UF3C120080K4S
    1200 V, 80 mohm SiC FET
    1,200
    80
    33
    Gen 3
    175
    Yes
    TO-247-4L
    UF3C120150B7S
    1200 V, 150 mohm SiC FET
    1,200
    150
    17
    Gen 3
    175
    No
    D2PAK-7L
    UF3C120150K4S
    1200 V, 150 mohm SiC FET
    1,200
    150
    18.4
    Gen 3
    175
    Yes
    TO-247-4L
    UF3C120400B7S
    1200 V, 410 mohm SiC FET
    1,200
    410
    7.6
    Gen 3
    175
    Yes
    D2PAK-7L
    UF3C120400K3S
    1200 V, 410 mohm SiC FET
    1,200
    410
    7.6
    Gen 3
    175
    Yes
    TO-247-3L
    UF3C170400B7S
    1700 V, 410 mohm SiC FET
    1,700
    410
    7.6
    Gen 3
    175
    Yes
    D2PAK-7L
    UF3C170400K3S
    1700 V, 410 mohm SiC FET
    1,700
    410
    7.6
    Gen 3
    175
    Yes
    TO-247-3L
    UF3SC065007K4S
    650 V, 6.7 mohm SiC FET
    650
    7
    120
    Gen 3
    175
    Yes
    TO-247-4L
    UF3SC065030B7S
    650 V, 27 mohm SiC FET
    650
    27
    62
    Gen 3
    175
    No
    D2PAK-7L
    UF3SC065040B7S
    650 V, 42 mohm SiC FET
    650
    42
    43
    Gen 3
    175
    No
    D2PAK-7L
    UF3SC120009K4S
    1200 V, 8.6 mohm SiC FET
    1,200
    9
    120
    Gen 3
    175
    Yes
    TO-247-4L
    UF3SC120016K3S
    1200 V, 16 mohm SiC FET
    1,200
    16
    107
    Gen 3
    175
    Yes
    TO-247-3L
    UF3SC120016K4S
    1200 V, 16 mohm SiC FET
    1,200
    16
    107
    Gen 3
    175
    Yes
    TO-247-4L
    UF3SC120040B7S
    1200 V, 35 mohm SiC FET
    1,200
    35
    47
    Gen 3
    175
    No
    D2PAK-7L
    UF4C120053B7S
    1200 V, 53 mohm SiC FET
    1,200
    53
    34
    Gen 4
    175
    Yes
    D2PAK-7L
    UF4C120053K3S
    1200 V, 53 mohm SiC FET
    1,200
    53
    34
    Gen 4
    175
    No
    TO-247-3L
    UF4C120053K4S
    1200 V, 53 mohm SiC FET
    1,200
    53
    34
    Gen 4
    175
    No
    TO-247-4L
    UF4C120070B7S
    1200 V, 72 mohm SiC FET
    1,200
    72
    25.7
    Gen 4
    175
    Yes
    D2PAK-7L
    UF4C120070K3S
    1200 V, 72 mohm SiC FET
    1,200
    72
    27.5
    Gen 4
    175
    No
    TO-247-3L
    UF4C120070K4S
    1200 V, 72 mohm SiC FET
    1,200
    72
    27.5
    Gen 4
    175
    No
    TO-247-4L
    UF4SC120023B7S
    1200 V, 23 mohm SiC FET
    1,200
    23
    72
    Gen 4
    175
    No
    D2PAK-7L
    UF4SC120023K4S
    1200 V, 23 mohm SiC FET
    1,200
    23
    53
    Gen 4
    175
    No
    TO-247-4L
    UF4SC120030B7S
    1200 V, 30 mohm SiC FET
    1,200
    30
    56
    Gen 4
    175
    No
    D2PAK-7L
    UF4SC120030K4S
    1200 V, 30 mohm SiC FET
    1,200
    30
    53
    Gen 4
    175
    No
    TO-247-4L
    UJ3C065030B3
    650 V, 27 mohm SiC FET
    650
    27
    65
    Gen 3
    175
    Yes
    D2PAK-3L
    UJ3C065030K3S
    650 V, 27 mohm SiC FET
    650
    27
    85
    Gen 3
    175
    Yes
    TO-247-3L
    UJ3C065030T3S
    650 V, 27 mohm SiC FET
    650
    27
    85
    Gen 3
    175
    Yes
    TO-220-3L
    UJ3C065080B3
    650 V, 80 mohm SiC FET
    650
    80
    25
    Gen 3
    175
    Yes
    D2PAK-3L
    UJ3C065080K3S
    650 V, 80 mohm SiC FET
    650
    80
    31
    Gen 3
    175
    Yes
    TO-247-3L
    UJ3C065080T3S
    650 V, 80 mohm SiC FET
    650
    80
    31
    Gen 3
    175
    Yes
    TO-220-3L
    UJ3C120040K3S
    1200 V, 35 mohm SiC FET
    1,200
    35
    65
    Gen 3
    175
    Yes
    TO-247-3L
    UJ3C120070K3S
    1200 V, 70 mohm SiC FET
    1,200
    70
    34.5
    Gen 3
    175
    Yes
    TO-247-3L
    UJ3C120070K4S
    1200 V, 70 mohm SiC FET
    1,200
    70
    34.5
    Gen 3
    175
    Yes
    TO-247-4L
    UJ3C120080K3S
    1200 V, 80 mohm SiC FET
    1,200
    80
    33
    Gen 3
    175
    Yes
    TO-247-3L
    UJ3C120150K3S
    1200 V, 150 mohm SiC FET
    1,200
    150
    18.4
    Gen 3
    175
    Yes
    TO-247-3L
    UJ4C075018K3S
    750 V, 18 mohm SiC FET
    750
    18
    81
    Gen 4
    175
    Yes
    TO-247-3L
    UJ4C075018K4S
    750 V, 18 mohm SiC FET
    750
    18
    81
    Gen 4
    175
    Yes
    TO-247-4L
    UJ4C075023B7S
    750 V, 23 mohm SiC FET
    750
    23
    64
    Gen 4
    175
    Yes
    D2PAK-7L
    UJ4C075023K3S
    750 V, 23 mohm SiC FET
    750
    23
    66
    Gen 4
    175
    Yes
    TO-247-3L
    UJ4C075023K4S
    750 V, 23 mohm SiC FET
    750
    23
    66
    Gen 4
    175
    Yes
    TO-247-4L
    UJ4C075023L8S
    750 V, 23 mohm SiC FET
    750
    23
    64
    Gen 4
    175
    No
    TOLL
    UJ4C075033B7S
    750 V, 33 mohm SiC FET
    750
    33
    44
    Gen 4
    175
    Yes
    D2PAK-7L
    UJ4C075033K3S
    750 V, 33 mohm SiC FET
    750
    33
    47
    Gen 4
    175
    Yes
    TO-247-3L
    UJ4C075033K4S
    750 V, 33 mohm SiC FET
    750
    33
    47
    Gen 4
    175
    Yes
    TO-247-4L
    UJ4C075033L8S
    750 V, 33 mohm SiC FET
    750
    33
    44
    Gen 4
    175
    No
    TOLL
    UJ4C075044B7S
    750 V, 44 mohm SiC FET
    750
    44
    35.6
    Gen 4
    175
    Yes
    D2PAK-7L
    UJ4C075044K3S
    750 V, 44 mohm SiC FET
    750
    44
    37.4
    Gen 4
    175
    Yes
    TO-247-3L
    UJ4C075044K4S
    750 V, 44 mohm SiC FET
    750
    44
    37.4
    Gen 4
    175
    Yes
    TO-247-4L
    UJ4C075044L8S
    750 V, 44 mohm SiC FET
    750
    44
    35.6
    Gen 4
    175
    No
    TOLL
    UJ4C075060B7S
    750 V, 58 mohm SiC FET
    750
    58
    25.8
    Gen 4
    175
    Yes
    D2PAK-7L
    UJ4C075060K3S
    750 V, 58 mohm SiC FET
    750
    58
    28
    Gen 4
    175
    Yes
    TO-247-3L
    UJ4C075060K4S
    750 V, 58 mohm SiC FET
    750
    58
    28
    Gen 4
    175
    Yes
    TO-247-4L
    UJ4C075060L8S
    750 V, 58 mohm SiC FET
    750
    58
    27.8
    Gen 4
    175
    No
    TOLL
    UJ4SC075005L8S
    750 V, 5.4 mohm SiC FET
    750
    5.4
    120
    Gen 4
    175
    No
    TOLL
    UJ4SC075006K4S
    750 V, 5.9 mohm SiC FET
    750
    5.9
    120
    Gen 4
    175
    No
    TO-247-4L
    UJ4SC075008L8S
    750 V, 8.6 mohm SiC FET
    750
    8.6
    106
    Gen 4
    175
    No
    TOLL
    UJ4SC075009B7S
    750 V, 9 mohm SiC FET
    750
    9
    106
    Gen 4
    175
    Yes
    D2PAK-7L
    UJ4SC075009K4S
    750 V, 9 mohm SiC FET
    750
    9
    106
    Gen 4
    175
    No
    TO-247-4L
    UJ4SC075010L8S
    750 V, 10.7 mohm SiC FET
    750
    10.7
    106
    Gen 4
    175
    No
    TOLL
    UJ4SC075011B7S
    750 V, 11 mohm SiC FET
    750
    11
    104
    Gen 4
    175
    Yes
    D2PAK-7L
    UJ4SC075011K4S
    750 V, 11 mohm SiC FET
    750
    11
    104
    Gen 4
    175
    No
    TO-247-4L
    UJ4SC075018B7S
    750 V, 18 mohm SiC FET
    750
    18
    72
    Gen 4
    175
    Yes
    D2PAK-7L
    UJ4SC075018L8S
    750 V, 18 mohm SiC FET
    750
    18
    53
    Gen 4
    175
    No
    TOLL

    SiC JFETs (6)

    Part #
    Description
    VDS Max
    V
    RDS(on) Typ @ 25C
    mohm
    ID Max
    A
    Generation
    Tj Max
    °C
    Automotive Qualification
    Package Type
    UF3N170400B7S
    1700 V, 400 mohm Normally-On SiC JFET
    1,700
    400
    6.8
    Gen 3
    175
    Yes
    D2PAK-7L
    UJ3N065025K3S
    650 V, 25 mohm Normally-On SiC JFET
    650
    25
    85
    Gen 3
    175
    Yes
    TO-247-3L
    UJ3N065080K3S
    650 V, 80 mohm Normally-On SiC JFET
    650
    80
    32
    Gen 3
    175
    Yes
    TO-247-3L
    UJ3N120035K3S
    1200 V, 35 mohm Normally-On SiC JFET
    1,200
    35
    63
    Gen 3
    175
    Yes
    TO-247-3L
    UJ3N120065K3S
    1200 V, 66 mohm Normally-On SiC JFET
    1,200
    66
    34
    Gen 3
    175
    Yes
    TO-247-3L
    UJ3N120070K3S
    1200 V, 70 mohm Normally-On SiC JFET
    1,200
    70
    33.5
    Gen 3
    175
    Yes
    TO-247-3L