TGA2622-CP
9 - 10 GHz, 35 Watt GaN Power Amplifier
Key Features
- Frequency range: 9 - 10 GHz
- Pout: 45.5 dBm (PIN = 18 dBm)
- PAE: > 43% (PIN = 18 dBm)
- Power gain: 27.5 dB (PIN = 18 dBm)
- Bias: VD = 28 V, IDQ = 290 mA, VG = -2.7 V typical (Pulsed: PW = 100 us, DC = 10%)
- Package dimensions: 15.2 x 15.2 x 3.5 mm
- Package base is pure Cu offering superior thermal management
Qorvo's TGA2622-CP is a packaged, high-power X-Band amplifier fabricated on Qorvo's QGaN25 0.25 um GaN on SiC production process. Operating from 9 to 10 GHz, the TGA2622-CP achieves 35 W saturated output power, a power-added efficiency of greater than 43 %, and power gain of 27.5 dB.
The TGA2622-CP is packaged in a 10-lead 15x15 mm bolt-down package with a Cu base for superior thermal management. It can support a range of bias voltages and performs well under both pulsed and CW conditions. Both RF ports are internally DC blocked and matched to 50 ohms allowing for simple system integration.
The TGA2622-CP is ideally suited for both commercial and defense applications.
Lead free and RoHS compliant.
Typical Applications
- Weather and Marine Radar
Product Categories
Application Categories
| Frequency Min(GHz) | 9 |
| Frequency Max(GHz) | 10 |
| Pout(W) | 35 |
| Gain(dB) | 30 |
| PAE(%) | > 43 |
| Voltage(V) | 28 |
| Current(mA) | 290 |
| Package Type | Cu Base |
| Package(mm) | 15.2 x 15.2 x 3.5 |
| RoHS | Yes |
| Lead Free | Yes |
| Halogen Free | Yes |
| ITAR Restricted | No |
| ECCN | 3A001.B.2.B.2 |
This product appears in the following application block diagrams: