Qorvo's TGA2576-2-FL is a wideband power amplifier fabricated on Qorvo's proven 0.25um GaN on SiC production technology. Operating from 2.5 to 6 GHz, the TGA2576-2-FL achieves 40W of saturated output power, greater than 36% power-added efficiency and 29dB small signal gain.
For ideal thermal management and handling, the TGA2576-2-FL is offered in a CuW-based flanged packaged and can operate in both CW and pulsed modes.
Fully matched to 50 ohm and with integrated DC blocking caps on both I/O ports, the TGA2576-2-FL is ideally suited to support a variety of commercial and defense related applications.
Lead-free and RoHS compliant.
Evaluation Boards are available up on request.
For additional information on GaN thermal performance refer to the following application note and video.
Frequency Min(GHz) | 2.5 |
Frequency Max(GHz) | 6 |
Pout(dBm) | 46.5 |
Psat(dBm) | 46.5 |
Gain(dB) | 29 |
PAE(%) | 36 |
Voltage(V) | 30 |
Current(mA) | 1,550 |
Package Type | Flange |
Package(mm) | 11.4 x 17.3 x 3 |
RoHS | Yes |
Lead Free | Yes |
Halogen Free | Yes |
ITAR Restricted | No |
ECCN | 3A001.B.2.A.4 |
This product appears in the following application block diagrams: